| NAND Flash |
|
|
Performance |
|
| Manufacturer: |
Micron |
|
Sequential Read: |
540 MB/s |
| Name: |
N48R FortisFlash |
|
Sequential Write: |
500 MB/s |
| Part Number: |
NY240 |
|
Random Read: |
Unknown |
| Rebranded: |
MT29F2T08GELCEJ4-QU:C |
|
Random Write: |
Unknown |
| Type: |
QLC |
|
Endurance: |
120 TBW |
| Technology: |
176-layer |
|
Warranty: |
3 Years |
| Speed: |
1600 MT/s |
|
MTBF: |
1.5 Million Hours |
| Capacity: |
2 chips @ 2 Tbit |
|
Drive Writes Per Day (DWPD): |
0.2 |
| ONFI: |
4.2 |
|
SLC Write Cache: |
approx. 45 GB |
| Topology: |
Replacement Gate |
|
Controller |
|
| Die Size: |
69 mm² (14.8 Gbit/mm²) |
|
Manufacturer: |
Silicon Motion |
| Dies per Chip: |
2 dies @ 1 Tbit |
|
Name: |
SM2259XT |
| Planes per Die: |
4 |
|
Architecture: |
ARM 32-bit |
| Decks per Die: |
2 |
|
Flash Channels: |
4 |
| Word Lines: |
195 per NAND String 90.3% Vertical Efficiency |
|
Frequency: |
400 MHz |
| Read Time (tR): |
90 µs |
|
Core Count: |
Single-Core |
| Program Time (tProg): |
1600 µs |
|
Process: |
28 nm |
| Block Erase Time (tBERS): |
15 ms |
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